general description product summary v ds i d (at v gs =10v) 10a r ds(on) (at v gs =10v) < 0.75 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOTF10N50FDl symbol v ds the AOTF10N50FD has been fabricated using an advanced high voltage mosfet process that is design ed to deliver high levels of performance and robustnes s in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing o ffline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 600v@150 drain-source voltage 500 AOTF10N50FD g d s top view to-220f g d s AOTF10N50FD v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q jc * drain current limited by maximum junction tempera ture. aot10n50fd 65 2.5 50 0.4 power dissipation b p d t c =25c thermal characteristics 300 -55 to 150 c avalanche current c 216 single pulsed avalanche energy g 433 3.8 repetitive avalanche energy c a w gate-source voltage t c =100c a 33 pulsed drain current c continuous drain current t c =25c i d maximum junction-to-case mj c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c/w 5 junction and storage temperature range maximum junction-to-ambient a,d c units w/ o c mj 10* 6* v/ns v 30 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF10N50FD
symbol min typ max units 500 600 bv dss / ? tj 0.56 v/ o c 10 100 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 2.5 3.1 4.2 v r ds(on) 0.6 0.75 w g fs 10 s v sd 0.93 1.6 v i s maximum body-diode continuous current 10 a i sm 33 a c iss 820 1030 1240 pf c oss 75 112 150 pf c rss 5 10 15 pf r g 1.7 3.4 5.2 w q g 20 26 35 nc q gs 4.8 nc q gd 9.5 nc t d(on) 24 ns t r 65 ns t d(off) 69 ns gate drain charge diode forward voltage zero gate voltage drain current v ds =500v, v gs =0v output capacitance v ds =5v, i d =250 m a v ds =400v, t j =125c i d =10ma, v gs =0v, t j =25c i d =10ma, v gs =0v, t j =150c m a maximum body-diode pulsed current input capacitance v ds =0v, v gs =30v gate source charge turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =250v, i d =10a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =10a zero gate voltage drain current i d =10ma, vgs=0v i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss v drain-source breakdown voltage static drain-source on-resistance v gs =10v, i d =5a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =10a,v gs =0v v ds =40v, i d =5a forward transconductance t d(off) 69 ns t f 50 ns t rr 116 190 ns q rr 0.3 0.6 m c body diode reverse recovery charge i f =10a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time i f =10a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =2.3a, v dd =150v, r g =25 ? , starting t j =25 c a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.8a, v dd =150v, r g =25 ? , starting t j =25 c 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF10N50FD
typical electrical and thermal characteristics 0 5 10 15 20 25 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 6v 10v 6.5v 5.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 r ds(on) ( w w w w ) i d (a) figure 3: on - resistance vs. drain current v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =5a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.4 0.8 1.2 1.6 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 3: on - resistance vs. drain current and gate voltage figure 4: on - resistance vs. junction temperature 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5:break down vs. junction temparature 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF10N50FD
typical electrical and thermal characteristics 0 3 6 9 12 15 0 8 16 24 32 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =10a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 2 4 6 8 10 12 0 25 50 75 100 125 150 current rating i d (a) t ( o c) 1s v ds (volts) figure 9: maximum forward biased safe operating area for AOTF10N50FD (note f) t case ( o c) figure 10: current de-rating (note b) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOTF10N50FD (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF10N50FD
typical electrical and thermal characteristics -15 -10 -5 0 5 10 15 -800 -600 -400 -200 0 200 400 600 800 1000 1200 i f (a) trr (ns) figure 12: diode recovery characteristics v ds =100v i f =10a di/dt=100a/ m s AOTF10N50FD aot9n50 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF10N50FD
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOTF10N50FD
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